High Performance (001) $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky Barrier Diode

A Schottky barrier diode (SBD) without field plate was fabricated on a Si-doped N-Ga2O3drift layer, which was grown by halide vapor phase epitaxy (HVPE) on a heavily Sn-doped (001) β-Ga2O3substrate. The thickness and concentration of N-drift layer were 5 μm and 3.8×1016cm-3, respectively. The reverse breakdown voltage (BV) and specific on-resistance (Ron) of the fabricated Ga2O3SBD were 825 V and 3.5 mΩ·cm2, respectively, leading to a high Baliga figure-of-merit (BV2/Ron) of 194.5 MW·cm-2. Besides, a high current on/off ratio of 4.2×1010was obtained.