Chrysene Derivatives as New Organic Semiconductors for Organic Field-effect Transistors

Organic field-effect transistors based on vapor deposited films of 2,8-dioctylchrysene (C8-CR), 2,8-diphenylchrysene (Ph-CR), 2,8-dinaphthylchrysene (Nap-CR) and 2,8-bis(octylstyryl)chrysene (C8S-CR) were successfully fabricated. All the chrysene derivatives based OFETs showed typical p-channel FET characteristics, and the best field-effect mobility of 4.1 x 10^-2 cm^2V^-1s^-1 with on/off current ratio of 10^5 was obtained for the Ph-CR based OFET. Interestingly, the field-effect characteristics were strongly affected by substrate temperatures (Tsub). According to the AFM and XRD measurements, molecular packing and morphology of the deposited films were drastically changed by substrate temperatures.