Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal–oxide–semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device's coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to 2 μm range, compatible with the optical networking spectrum. The emitted light intensity can be electrically controlled by the drain voltage Vds while the peak emission wavelength depends on the channel thickness and slightly on Vds. Moreover, the location of the radiative recombination source inside the channel, responsible for the light emission, is also controllable through the applied voltages.