塞贝克系数
热电效应
电阻率和电导率
材料科学
凝聚态物理
半导体
功勋
热电材料
简并半导体
相(物质)
金属
简并能级
分析化学(期刊)
化学
热力学
物理
光电子学
冶金
有机化学
色谱法
量子力学
作者
Michael O. Ogunbunmi,Svilen Bobev
标识
DOI:10.1021/acs.chemmater.2c02103
摘要
This work reports the synthesis, structure, and thermoelectric transport properties of the hole-dominated semiconductors with a general formula Ca10RECdSb9 (RE = Y, Ce, Nd, Sm, and Lu). These materials feature unexpectedly high Seebeck coefficients, up to 650 μV/K at 600 K, and electrical resistivities on the order of 1–1000 mΩ·cm, which is an indication of a degenerate semiconducting state. For example, the Seebeck coefficient observed in Ca10NdCdSb9 (309 μV/K at 600 K) is accompanied by low and metallic-like electrical resistivity (6 mΩ·cm) and a carrier concentration of n = 4.68 × 1020 cm–3. The calculated power factor PF in Ca10NdCdSb9 is 0.88 μW/cm·K2 at 300 K, and calculations based on the single parabolic band model indicate that an optimum PFopt of 1.68 μW/cm·K2 can be achieved at that temperature for a carrier concentration of nopt = 6.62 × 1019 cm–3. The estimated thermoelectric figure of merit zT in this material when properly tuned is expected to surpass zT = 1 at 600 K.
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