摩擦电效应
晶体管
材料科学
纳米发生器
有机半导体
光电子学
半导体
纳米技术
电子线路
电气工程
电压
工程类
压电
复合材料
作者
Yichen Wei,Wanrong Liu,Jinran Yu,Yonghai Li,Yifei Wang,Ziwei Huo,Liuqi Cheng,Zhenyu Feng,Jia Sun,Qijun Sun,Zhong Lin Wang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2022-11-10
卷期号:16 (11): 19199-19209
被引量:8
标识
DOI:10.1021/acsnano.2c08420
摘要
Triboelectric potential gated transistors have inspired various applications toward mechanical behavior controlled logic circuits, multifunctional sensors, artificial sensory neurons, etc. Their rapid development urgently calls for high-performance devices and corresponding figure of merits to standardize the tribotronic gating properties. Organic semiconductors paired with solution processability promise low-cost manufacture of high-performance tribotronic transistor devices/arrays. Here, we demonstrate a record high-performance tribotronic transistor array composed of an integrated triboelectric nanogenerator (TENG) and a large-area device array of C8-BTBT-PS transistors. The working mechanism of effective triboelectric potential gating is elaborately explained from the aspect of conjugated energy bands of the contact-electrification mediums and organic semiconductors. Driven by the triboelectric potential, the tribotronic transistor shows superior properties of record high current on/off ratios (>108), a steep subthreshold swing (29.89 μm/dec), high stability, and excellent reproducibility. Moreover, tribotronic logic devices modulated by mechanical displacement have also been demonstrated with good stability and a high gain of 1260 V/mm. The demonstrated large-area tribotronic transistor array of organic semiconductor exhibits record high performance and offers an effective R&D platform for mechano-driven electronic terminals, interactive intelligent system, artificial robotic skin, etc.
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