Precursor Reactivity-Dependent Growth for Alloyed InGaP Quantum Dots

Alloying is an effective strategy for bandgap engineering in semiconductors, and the precursor reactivities serve as the critical parameter for forming homogeneous alloyed quantum dots (QDs). In this study, various indium and gallium precursors were systematically screened to synthesize alloyed InGaP QDs. By correlating the molar ratio in the precursor feed with the final composition of the QDs, suitable indium and gallium precursors with matched reactivities were identified, enabling precise control of the Ga content in the alloy from 5% to 20%. Homogeneous InGaP QDs were obtained and further coated with a ZnS shell, which significantly enhanced their stability and boosted the photoluminescence quantum yield to 70%. This work highlights the essential role of precursor reactivity matching in the synthesis of compositionally controlled alloyed QDs and provides a valuable reference for the rational design of advanced alloyed nanocrystals.