材料科学
光电探测器
栅栏
时域有限差分法
光电子学
响应度
光学
物理
作者
Akhmadi Surawijaya,Zefanya Chandra,Muhammad Amin Sulthoni,Irman Idris,Trio Adiono
出处
期刊:Electronics
[MDPI AG]
日期:2023-01-28
卷期号:12 (3): 663-663
被引量:4
标识
DOI:10.3390/electronics12030663
摘要
In this research, we modeled a silicon-based photodetector for the NIR-IR spectrum using a grating structure fabricated using the metal-assisted chemical etching method. A nanostructure fabricated by using this method is free of defects such as unwanted sidewall metal depositions. The device is simulated using Lumerical finite difference time domain (FDTD) for optical characteristics and Lumerical CHARGE for electrical characteristics. First, we optimized the grating structure duty cycle parameter for maximum optical power absorption using the particle swarm optimization algorithm provided in Lumerical FDTD, and then used the optimized parameter for our simulations. From Lumerical FDTD simulations, we found that the Cr masker metal used in the fabrication process acts as a resonant cavity and a potential candidate for internal photo emission (IPE) effects. By using Lumerical CHARGE, we performed electrical simulation and by adding the IPE calculation we found that at 850 nm wavelength the Si grating photodetector device exhibited 19 mA/W responsivity and detectivity of 2.62 × 106 Jones for −1 volt operating voltage.
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