Optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As determined by variable-angle spectroscopic ellipsometry

The optical constants of single-crystal AlxGa1−xP and AlxGa1−xAs have been widely studied at various Al compositions but have not yet been thoroughly investigated as polycrystalline materials. Using variable-angle spectroscopic ellipsometry, we estimate and analyze the optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As that were non-epitaxially deposited at deposition temperatures of either 250 or 420 °C, and with various dopant species, dopant concentrations, and V/III flux ratios. For wavelengths of 350–400 nm, decreasing the V/III ratio increases the refractive index of Be-doped polycrystalline Al0.25Ga0.75P. For wavelengths >500 nm, as the targeted Be dopant concentration increases for polycrystalline Al0.25Ga0.75P, the amount the extinction coefficient increases and the indirect bandgap decreases depends on the V/III ratio. Furthermore, Si-doped polycrystalline Al0.25Ga0.75P has significantly smaller extinction coefficient values than when it is Be-doped, for the same V/III ratio and targeted doping concentration, at wavelengths >500 nm. Based on our findings, we hypothesize that the dopant species, dopant concentration, and the V/III ratio dictate various types of defect concentrations, which then affect the optical constants and indirect bandgap of polycrystalline Al0.25Ga0.75P. Additionally, for wavelengths >500 nm, we find that polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As have the lowest extinction coefficient values when deposited at 420 °C, as opposed to 250 °C. Thus, we hypothesize that the deposition temperature is the most significant factor in dictating the optical constants of these polycrystalline III-Vs. Ultimately, this work demonstrates alternative methods to tune the optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As, as opposed to tuning the Al composition.