Low Power Consumption and High Sensitivity Temperature Sensor Chip Based on Monolayer Suspended Graphene Field Effect Transistor

With the rapid development of integrated circuits (IC), temperature sensing chips with small size and low power consumption will play an important role in the field of IC in the post-Moore era. In this paper, a field effect transistors (FETs) structure based on monolayer suspended graphene was designed and prepared, and the influence of temperature on its electrical characteristics was explored. The experimental results show that FETs could realize temperature detection in the temperature range from 30 °C to 150 °C, and the temperature sensitivity temperature coefficient of resistance (TCR) is 0.51 % °C ^-1 . Among them, phonon scattering and thermal expansion effects are the two main mechanisms affecting the resistance increase of graphene. Due to the effective suppression of charged impurity scattering and phonon scattering by the suspended structure, the carrier mobility of graphene FETs reaches 23000 cm ² /Vs at room temperature and atmospheric pressure. The excellent sensitivity, repeatability, and stability of graphene FETs not only provide a new way for temperature sensing chips in the field of IC, but also its high carrier mobility ensures low power consumption of the device.