Fundamentals and Future Challenges of SiC Power Devices

Silicon carbide (SiC) exhibits unique anisotropy in carrier transport such as higher electron mobility (> 1,200 cm²/Vs) and higher critical electric field strength (2.5-5.0 MV/cm) along <0001> than those perpendicular to <0001>. Although SiC power MOSFETs still suffer from low channel mobility, recent innovations in both gate-oxide formation and device designs enable significant performance improvement. An oxidation-minimizing process is promising for mobility enhancement (> 100 cm²/Vs) of SiC MOSFETs.