Characterization of CuO Thin Films Based Memristive Devices for Resistive Random-Access Memory

This paper discusses into the intricate realm of resistive switching, exploring the optical characteristics of metal oxide thin film memristors with a specific focus on Copper Oxide (CuO), a distinguished p-type metal oxide semiconductor. The investigation unfolds the promising potential of CuO thin films for applications in resistive switching devices, shedding light on their unique optical and electrical properties. The planar memristive device, extensively fabricated using a solution process, showcases notable hysteresis characteristics in its current-voltage properties. The CuO thin films, synthesized on glass substrates, undergo detailed examination through advanced characterization techniques, including Atomic Force Microscopy (AFM) for surface morphology analysis, Grazing Incidence X-ray Diffraction (GIXRD) for structural examination, UV–Vis–NIR spectroscopy for optical insights and I-V Characteristics for electrical insights. The results that were presented have shown that CuO thin films have potential use in high- speed, low-power electronics. This work also highlights the potential of CuO based memristors, contributing to the evolution of sustainable electronic technology.