电流(流体)
激光器
材料科学
光电子学
光学
物理
热力学
作者
Toshihiko Fukamachi,Junichi Nishinaka,Koichi Naniwae,S Usuda,Haruki Fukai,Akihiko Sugitani,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama
标识
DOI:10.35848/1882-0786/ad40fb
摘要
Abstract We have developed a GaN-based distributed feedback laser diode (DFB-LD) with the detuning of +5 nm to obtain a smaller temperature dependence of the threshold current. We found that the current-light characteristics almost overlapped up to 300 mW between 25 °C and 80 °C. The estimated characteristic temperature is about 2550 K. These indicate that our DFB-LD is promising for applications that require small temperature dependence in the output power and oscillation wavelength at constant operation current without precise temperature control.
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