Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

In this Letter, the reliability of indium-tin-zinc-oxide thin-film transistors (TFTs) under dynamic drain voltage stress is investigated. A degradation phenomenon, associated with both pulse rising time (tr) and falling time, is observed. Through the technology computer-aided design simulation and recovery experiment, it is discovered that the tr-dependent dynamic hot carrier effect and integral voltage-dependent electron detrapping jointly affect the device's reliability. Finally, an AC degradation model in indium-tin-zinc oxide TFTs, considering the non-equilibrium junction, hot carrier injection, and recovery, was proposed.