Advanced Fabrication of 56 Gbaud Electro-Absorption Modulated Laser (EML) Chips Integrated with High-Speed Silicon Photonic Substrates

With the rapid growth of data center demand driven by AI, high-speed optical modules (such as 800G and 1.6T) have become critical components. Traditional 800G modules face issues such as complex processes and large sizes due to the separate packaging of EML chips, AlN substrates, and capacitors. This study proposes a high-speed EML module based on silicon integration, where resistors, capacitors, and AuSn soldering areas are integrated onto the silicon substrate, enabling the bonding of the EML chip, reducing packaging costs, and enhancing scalability. Key achievements include: the development of a 100G EML chip; the fabrication of a high-speed silicon integrated carrier; successful Chip-on-Carrier (COC) packaging and testing, with a laser output power of 10 mW, extinction ratio of 10 dB, and bandwidth greater than 40 GHz; and reliability verified through 500 h of aging tests. This study provides an expandable solution for next-generation high-speed optical interconnects.