Ultra-Wide Bandgap ß-gallium Oxide (Ga2O3) Advancing Next-Generation Defense Technologies

Ultra-wide bandgap β-Gallium oxide (Ga2O3) has gained great attention for next-generation defense applications due to its outstanding properties, including a wide energy bandgap (Eg) (~4.6-4.8 eV), high breakdown electric field (~8 MV/cm), high melting temperature (1795 ºC), and excellent chemical and thermal stability in harsh environments. These characteristics make it ideal for next-generation defense technologies such as solar-blind UV photodetectors (for missile and rocket plume detection), sensors (for surveillance), and power electronics (for energy storage and propulsion systems). This review explores the background, properties, and potential of β-Ga2O3 in next generation defense applications, also discussing various thin-film growth techniques, etc. Here, it also covers challenges related to growth, thermal management, and dopant material to enhance the optical and electrical properties. The review explored by outlining opportunities and future scope for β-Ga2O3-based next-generation devices for compact, and resilient defense systems.