材料科学
硅
烧蚀
纳秒
激光烧蚀
基质(水族馆)
图层(电子)
光电子学
制作
太阳能电池
激光器
热的
光学
纳米技术
航空航天工程
气象学
病理
替代医学
工程类
地质学
物理
海洋学
医学
作者
Pinal Rana,Atul K. Singh,Anil Kottantharayil,Deepak Marla
标识
DOI:10.1016/j.mfglet.2022.12.003
摘要
Creating narrow openings on a silicon substrate containing a SiNx nanofilm (80–85 nm) is essential in fabricating PERC solar cells. This research shows that nanosecond laser ablation can selectively remove only the SiNx layer with high precision. Four ablation regimes were identified based on experimental measurements of the ablated surface and temperature evaluations from computational modeling. In one regime, only the SiNx layer is ablated via film breakage due to the subsurface silicon’s thermal expansion. In contrast, the other regimes demonstrated much deeper ablation depths with severe thermal damage in the ablated region.
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