Strain engineering for CMOS devices

This work reviews the current progress in high-mobility strained MOSFETs and covers the latest developments in strain engineering. The paper focuses on the connections between strain, band structure, and channel mobility characteristics. The authors show that accurate band structure calculations are essential to understand the different mechanisms of mobility gain induced by uniaxial and biaxial strain. The transport properties of strained silicon (Si) have been investigated by solving the Boltzmann equation using the Monte Carlo method