光电导性
光电子学
红外线的
光探测
光电探测器
材料科学
截止频率
红外探测器
光学
探测器
制作
碲化镉汞
物理
医学
病理
替代医学
作者
Giacinta Parish,Charles Musca,J.F. Siliquini,J. Antoszewki,John Dell,Brett Nener,Lorenzo Faraone,Gideon Gouws
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:1997-07-01
卷期号:18 (7): 352-354
被引量:3
摘要
A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 μm and 8-12 μm, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths. The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The resulting detectors have an MWIR cutoff of 5.0 μm, and LWIR cutoff of 10.5 μm.
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