Plasma damage effect on ultraviolet-induced degradation of PECVD SiNx:H passivation

A mechanism of the ultraviolet (UV)-induced degradation of SiNx:H passivation is investigated from the viewpoint of PECVD-induced defects. Due to the PECVD, the damaged layer with around 50 nm is formed near the Si surface. These defects are passivated with hydrogen atoms, resulting in low recombination velocity at this region. However, it is increased by the light irradiation and minority carrier lifetime is decreased. Therefore, it is important to consider the effect of plasma-induced damage for better understanding the UV-degradation mechanism.