Effect of annealing on the properties of transparent conducting Ag doped ZnO thin films prepared by r.f. magnetron sputtering method

Ag doped ZnO thin films were prepared by r.f. magnetron sputtering method and then heat treated at 450 o C in 2 hours in different ambients (air, O 2 /O 3 ). Evolution of morphology, optical and electrical properties of the as-prepared thin films upon annealing environments was studied. XRD analysis demonstrated that annealing had resulted in better crystallization as well as higher transparence. Optical absorption showed that the band gap of the films also reduced after heat treatment. The results also showed that conductivity of the films could be tuned from 10 −3 Ω.cm to 10 +5 Ω.cm by an appropriate annealing process. • Effect of annealing process on properties of Ag doped ZnO thin films were studied thouroughly. • Annealing in rich and active oxygen ambient enhances crystallinity, smoothness and transparency of the films. • The band gap of the films reduced after heat treatment. • Conductivity of the films could be tuned from 10 −3 Ω.cm to 10 +5 Ω.cm by an appropriate annealing process.