Large‐area monoPoly solar cells on 110 μm thin c–Si wafers with a rear n+poly‐Si/SiOx stack deposited by inline plasma‐enhanced chemical vapour deposition

Abstract We present an overview of SERIS' monoPoly technology on screen‐printed, M2‐size (244.4 cm 2 ) n ‐type bifacial silicon solar cells with a rear n + :poly‐Si/SiO x passivating contact stack, where the SiO x and n + :poly‐Si layers are fabricated by single‐side inline plasma‐enhanced chemical vapour deposition (PECVD). We demonstrate the application of these stacks on thin (~110 μm) silicon wafers, giving an excellent open‐circuit voltage of 707 mV and an externally verified cell efficiency of 23.2% using commercial screen‐printed and fire‐through metal pastes. A detailed power analysis is presented, with a breakdown of the voltage and current losses. Finally, we share the progress on standard wafers with an efficiency of 23.8% achieved and present the outlook for this technology with a selective passivating contact stack at the front and a full‐area passivating contact stack at the rear.