Identification of defects and defect energy distribution in the perovskite layer of MAPbI3−xClx perovskite solar cell

Here we elucidate the defects and defect energy distribution in the perovskite layer of MAPbI3−xClx perovskite solar cell. The electrochemical impedance spectroscopy (EIS) result depicts that the interfacial recombination of electrons and holes taking place in MAPbI3−xClx/TiO2 junction. Furthermore, an increase in interfacial charge recombination resistance (Rct) was observed with decrease in temperature suggesting a reduction in the recombination rate. A non-linear dependence of series resistance (RS) with temperature was observed. From admittance spectroscopy, it can be conclude that defects are present in MAPbI3−xClx perovskite layer at energy level sites of 0.625 eV. This study may help to understand and discuses about the electronic defects and temperature instability of PSCs.