Design and Fabrication of 1.2kV/40m Ω 4H-SiC MOSFET

A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 1×10 ¹⁶ cm ^-3 . The devices were fabricated with a floating guard ring edge termination. The drain current I _d = 20 A at V _g = 20 V, corresponding to V _d ≤ 1.6 V.