Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer

Nonvolatile organic field-effect transistor (OFET) photoelectric memories have attracted tremendous attention due to special photoelectric memory mechanism and application area, such as image capture and light information storage. Unfortunately, conventional two-step preparation method of floating gate and tunneling layer is complex and not conducive to large-area. Here, a nonvolatile OFET photoelectric memory with perovskite quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA) as charge trapping layer is reported. The photoelectric memory can effectively accumulate and release photo-generated carriers during photo- or photoelectric programming operations and electrical erasing operation. The memory characteristics of the photoelectric memory are comparable to that of traditional memories with two-step preparation technique of floating gate and tunneling layer. In addition, the memory device presents well retention time and endurance property even after being exposed to air for two weeks. Hence, the memory using QDs/PMMA composites as charge trapping layer shows great potential for the application in photoelectric devices.