过电位
塔菲尔方程
钴
氢原子
材料科学
氢
吸附
费米能级
过渡金属
催化作用
位阻效应
结晶学
化学物理
化学
Atom(片上系统)
物理化学
无机化学
物理
立体化学
电化学
有机化学
嵌入式系统
烷基
量子力学
电子
计算机科学
电极
作者
Wen Qiao,Wei Xu,Xiaoyong Xu,Liqian Wu,Shiming Yan,Dunhui Wang
标识
DOI:10.1021/acsaem.0c00163
摘要
Endowing the basal plane of metallic MoS2 with highly active catalytic sites is one strategy to promote its hydrogen evolution reaction (HER) catalytic performance. Since there is unsuitable orbital orientation at the Fermi energy level, the activity of HER for the perfect basal plane in metallic 1T phase MoS2 (1T-MoS2) is insufficient. Herein, we resolved this issue through a single-atom cobalt-introduced active orbital. The prepared cobalt (Co)-doped 1T-MoS2 displays a significantly enhanced HER activity. The overpotential at 10 mA cm–2 is 84 mV. The Tafel slope is 47 mV dec–1. The results of experiment and theory reveal that the doped Co atoms anchor preferentially on the Mo top sites, acting as active sites and possessing a Gibbs free energy near zero for hydrogen adsorption. Theoretical calculation further reveals that the high activity of Co anchoring on the surface is attributed to the introduction of a dz2 orbital perpendicular to the basal plane around the Fermi level, enabling energetically and sterically favorable hydrogen adsorption/desorption.
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