铜
镀铜
材料科学
氯化物
电镀
电镀(地质)
离子
扫描电子显微镜
电化学
硫酸盐
无机化学
化学工程
复合材料
电极
冶金
化学
图层(电子)
有机化学
物理化学
工程类
地质学
地球物理学
作者
Wei‐Ping Dow,Her-Shu Huang,Zack Lin
摘要
Blind vias with hole sizes of 85 and 110 μm formed by laser ablation on printed circuit boards were employed for investigation of filling by copper electroplating. The plating solution formulated was composed of acid copper sulfate, polyethylene glycol, 3-mercapto-1-propanesulfonate (MPS), and chloride ions. A "bottom-up" filling behavior had been observed with an appropriate MPS concentration. When MPS concentration was higher than conformal deposition occurred. However, this situation could be altered by adding more chloride ions into the plating solution to recover the behavior of bottom-up filling. Scanning electron microscopy showed that the recovery of bottom-up filling behavior is due to CuCl crystals formed by a synergistic effect between MPS and chloride ions. The synergistic effect results in acceleration of copper growth in via holes. These experimental results agree with the curvature-enhanced accelerator coverage mechanism. © 2003 The Electrochemical Society. All rights reserved.
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