Effects of H[sub 2]O[sub 2] on Electrochemical Characteristics of Silicon Wafers during Chemical Mechanical Polishing

Semiconductor silicon plays a significant role in microelectronic industries. In this paper, the effects of concentration on electrochemical characteristics of silicon wafers during chemical mechanical polishing (CMP) as well as under static conditions were investigated by dc polarization and ac impedance techniques. The results revealed that concentration had a strong influence on the electrochemical behaviors of silicon wafers. The passivation strengthened with increasing concentration under the static condition. The addition of into the slurry increased the potential drop between static and polishing conditions, and the maximal potential drop was observed in the slurry with . There existed an optimal concentration to obtain the maximum corrosion current density and polishing rate. A low surface roughness could be obtained after CMP.