部分位错
叠加断层
堆积
透射电子显微镜
立方晶系
材料科学
位错
晶体孪晶
结晶学
凝聚态物理
晶体缺陷
化学
纳米技术
物理
复合材料
微观结构
核磁共振
作者
Jian Wang,O. Anderoglu,J. P. Hirth,Amit Misra,X. Zhang
摘要
High resolution transmission electron microscopy of nanotwinned Cu films revealed Σ3 {112} incoherent twin boundaries (ITBs), with a repeatable pattern involving units of three {111} atomic planes. Topological analysis shows that Σ3 {112} ITBs adopt two types of atomic structure with differing arrangements of Shockley partial dislocations. Atomistic simulations were performed for Cu and Al. These studies revealed the structure of the two types of ITBs, the formation mechanism and stability of the associated 9R phase, and the influence of stacking fault energies on them. The results suggest that Σ3 {112} ITBs may migrate through the collective glide of partial dislocations.
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