EUV defect characterization study on post litho and etch for 1x and 2x node processes

EUV mask metrology and inspection challenges as well as EUV patterned wafer metrology and inspection strategies must be addressed to enable EUV patterning for pilot and high volume production. In this work we present a defectivity analysis of defects from post EUV lithography and etch and the correlation between them on 40nm and 28nm half pitch (HP) line/space structures. The objective of the work was to study the lithography and etch process window vs. pitch as well as to characterize the performance of a DUV brightfield wafer inspection system on EUV stacks in order to detect EUV related DOI's. In addition to defect characterization for the lithography and etch layers, we present the results of scattering simulation from these layers, with polarized 266nm DUV illumination, to provide insight on the light-pattern interaction and on the critical detection parameters.