电子迁移率
材料科学
有机半导体
载流子
电荷(物理)
半导体
水准点(测量)
限制
拉曼光谱
有机电子学
工作(物理)
数码产品
光电子学
纳米技术
晶体管
电气工程
化学
物理化学
光学
物理
机械工程
电压
大地测量学
量子力学
工程类
热力学
地理
作者
Oleg G. Kharlanov,Dmitry R. Maslennikov,Elizaveta V. Feldman,Г. Г. Абашев,Oleg V. Borshchev,Sergey A. Ponomarenko,Mikhail V. Vener,Dmitry Yu. Paraschuk,Andrey Yu. Sosorev
标识
DOI:10.1002/aelm.202100579
摘要
Abstract Further progress in organic electronics demands new highly efficient organic semiconductor (OS) materials. So far, however, band‐like charge transport with high mobilities has been reliably demonstrated only in a few OSs, and development of efficient methods for search of high‐mobility materials among a plethora of OSs remains extremely important. In the present work, a spectroscopic method is presented for screening of crystalline OSs with efficient charge transport, to be used prior to time‐consuming device measurements. Specifically, the work focuses on a physical rationale and an experimental benchmark of a correlation between the intensities of the low‐frequency Raman spectrum and the strength of dynamic disorder limiting the charge‐carrier mobility in a material. As a result, two physics‐inspired spectroscopic descriptors for charge‐carrier mobility estimation are suggested, both of which clearly correlate with device mobilities reported for various crystalline OSs. It is anticipated that the spectroscopic method based on these descriptors can serve as a powerful search tool for revealing new high‐mobility OS materials.
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