晶体管
材料科学
半导体
电子迁移率
光电子学
场效应晶体管
电流密度
数码产品
凝聚态物理
纳米技术
电气工程
电压
物理
量子力学
工程类
作者
Congwei Tan,Jianfeng Jiang,Jingyue Wang,Mengshi Yu,Teng Tu,Xiaoyin Gao,Junchuan Tang,Congcong Zhang,Yichi Zhang,Xuehan Zhou,Liming Zheng,Chenguang Qiu,Hailin Peng
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-04-25
卷期号:22 (9): 3770-3776
被引量:16
标识
DOI:10.1021/acs.nanolett.2c00820
摘要
High-mobility and air-stable two-dimensional (2D) Bi2O2Se semiconductor holds promise as an alternative fast channel material for next-generation transistors. However, one of the key challenges remaining in 2D Bi2O2Se is to prepare high-quality crystals to fabricate the high-performance transistors with a high on-state current density. Here, we present the free-standing growth of strain-free 2D Bi2O2Se crystals. An ultrahigh Hall mobility of 160 000 cm2 V-1 s-1 is measured in strain-free Bi2O2Se crystals at 2 K, which enables the observation of Shubnikov-de Haas quantum oscillations and shows substantially higher (>4 times) mobility over previous in-plane 2D crystals. The fabricated 2D transistors feature an on-off current ratio of ∼106 and a record-high on-state current density of ∼1.33 mA μm-1, which is comparable to that of commercial Si and Ge n-type field-effect transistors (FETs) for similar channel length. Strain-free 2D Bi2O2Se provides a promising material platform for studying novel quantum phenomena and exploration of high-performance low-power electronics.
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