Characteristics of TiN Thin Films Deposited by Substrate Temperature Variables Using Scanning Acoustic Microscopy

In this study, TiN thin films fabricated based on the substrate temperature process parameters of a DC magnetron sputtering device and their characteristics are analyzed. TiN thin films are deposited on Si wafer (100) substrates by setting the substrate temperatures to ambient temperature, 100, 200, and 300 °C. The residual stress measurement using the XRD method, adhesion characteristic analysis performed using a nanoscratch test to measure the critical load of the nanoindentation device, and leaky surface acoustic wave (LSAW) measurement were conducted using the V(z) technique of the ultrasonic microscope; the correlations between each measurement were analyzed. The residual stress of the TiN thin film was relieved by up to approximately 48% and adhesion properties enhanced by approximately 10% with an increase in the substrate temperature. In addition, the velocity of the LSAW presented a tendency to increase by up to approximately 5%. The residual stress and velocity of the LSAW were found to be inversely proportional, while the critical load and velocity of the LSAW were directly proportional.