材料科学
算法
数值孔径
分析化学(期刊)
计算机科学
化学
光电子学
波长
色谱法
作者
In-Hwa Kang,Jang-Gun Park,Chung-Hyun Ban,Hye-Keun Oh
标识
DOI:10.35848/1347-4065/abf2d1
摘要
Abstract In high numerical aperture (NA) extreme ultraviolet lithography, which is used to implement a finer linewidth of 10 nm or lower, serious problems arise in patterning as the NA increases. To alleviate such problems, a thin absorber and a multilayer with good reflective efficiency and improved pattern quality are required. To develop an effective EUV photomask for the commercialization of high-NA systems, we determined the optimal ruthenium (Ru)/silicon (Si) multilayer structure using a phase-shift mask (PSM) absorber. A Ru/Si multilayer d R u = 2.2 nm , d S i = 4.7 nm using PSM as an absorber has a smaller best-focus range and placement error compared to the molybdenum (Mo)/silicon (Si) multilayer. At the same time, it provides improved image contrast, enabling more stable patterning. Even when the number of layers of the Ru/Si multilayer was reduced, it was confirmed that the reflectance efficiency and image quality were maintained.
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