Ultra-Low Switching Loss Triple-Gate controlled IGBT

A triple-gate 1.2-kV Si-insulated-gate bipolar transistor (TG-IGBT) is proposed in order to drastically improve both turn-on loss (Eon) and turn-off loss (Eoff) by using a novel gate drive control technique. In this work, we fabricated a 1.2-kV TG-IGBT that achieved 50% and 28% Eon and Eoff reduction, respectively, compared with a conventional single-gate IGBT. This result indicates that it is possible to overcome the limitations of Si by optimizing the device structure and gate drive control.