掺杂剂
卤化物
光电子学
发光二极管
共发射极
有机发光二极管
二极管
量子效率
材料科学
光致发光
真空沉积
载流子
激子
纳米技术
薄膜
化学
兴奋剂
无机化学
物理
量子力学
图层(电子)
作者
Gijun Seo,Hyocheol Jung,Tielyr D. Creason,Vishal Yeddu,Matthew Bamidele,Elena Echeverría,Ji‐Hoon Lee,David N. McIlroy,Bayrammurad Saparov,Do Young Kim
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2021-06-28
卷期号:6 (7): 2584-2593
被引量:48
标识
DOI:10.1021/acsenergylett.1c01117
摘要
Lead-free halide light-emitting diodes (LEDs) are fabricated using nontoxic and earth-abundant CsCu2I3 with a strong yellow emission at a peak wavelength of 568 nm. CsCu2I3-based host–dopant emitters are formed by vacuum thermal evaporation (VTE) film codeposition process instead of the commonly used solution-based film deposition process. Using the VTE process, extremely thin (30 nm) host–dopant emitters have successfully been formed with the CsCu2I3 dopant and various organic host molecules. A bright yellow emission with a photoluminescence quantum yield value of 84.8% is achieved in the 0.5% CsCu2I3-doped halide emitter film due to the successful spatial localization of charge carriers and excitons using an organic host with appropriate energy levels to CsCu2I3. With the further enhancement in charge balance using the cohost system, a record-breaking lead-free halide LED has been fabricated with an EQE of 7.4%. The lead-free halide LEDs are also highly stable in the device operation with LT70 of 20 h at 100 cd/m2.
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