热电性
材料科学
兴奋剂
宽禁带半导体
氮化镓
温度系数
大气温度范围
镓
外延
光电子学
氮化物
激发
凝聚态物理
复合材料
热力学
冶金
图层(电子)
电介质
工程类
物理
电气工程
铁电性
作者
Sven Jachalke,Patrick Hofmann,G. Leibiger,Frank Habel,Erik Mehner,Tilmann Leisegang,Dirk C. Meyer,Thomas Mikolajick
摘要
The present study reports on the temperature dependent pyroelectric coefficient of free-standing and strain-free gallium nitride (GaN) grown by hydride vapor phase epitaxy (HVPE). The Sharp-Garn method is applied to extract the pyroelectric coefficient from the electrical current response of the crystals subjected to a sinusoidal temperature excitation in a range of 0 °C to 160 °C. To avoid compensation of the pyroelectric response by an internal conductivity, insulating GaN crystals were used by applying C, Mn, and Fe doping during HVPE growth. The different pyroelectric coefficients observed at room temperature due to the doping correlate well with the change of the lattice parameter c. The obtained data are compared to previously published theoretical and experimental values of thin film GaN and discussed in terms of a strained lattice.
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