铌酸锂
光子学
材料科学
硅光子学
微电子
光电子学
硅
混合硅激光器
微系统
薄膜
波导管
无线电频率
工程物理
纳米技术
电信
计算机科学
工程类
作者
Michael Rüsing,Peter O. Weigel,Jie Zhao,Shayan Mookherjea
出处
期刊:IEEE Nanotechnology Magazine
[Institute of Electrical and Electronics Engineers]
日期:2019-06-11
卷期号:13 (4): 18-33
被引量:48
标识
DOI:10.1109/mnano.2019.2916115
摘要
Lithium Niobate (LN) was the dominant material platform for integrated optics for several decades, based on its superior electro-optical and nonlinear (NL) optical properties. However, silicon photonics, despite its less favorable intrinsic properties, has been rapidly adopted by industry to support a smaller device footprint; higher component density; lower energy consumption; and compatibility with high-volume, low-cost silicon microelectronics manufacturing processes. However, the performance of LN integrated optics remains unsurpassed by silicon photonics. By adopting a thin-film technology and hybrid waveguide designs, LN and silicon photonics could both be integrated as optoelectronics layers in future 3D integrated microsystems. We discuss the multilayer device architecture vision and recently reported enabling research progress in thin-film LN technology and its integration into the silicon photonics system.
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