石墨烯
铜
材料科学
厘米
纳米技术
光电子学
冶金
化学工程
医学
外科
工程类
作者
Li Lin,Jiayu Li,Huaying Ren,Ai Leen Koh,Ning Kang,Hailin Peng,H. Q. Xu,Zhongfan Liu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2016-02-02
卷期号:10 (2): 2922-2929
被引量:98
标识
DOI:10.1021/acsnano.6b00041
摘要
The controlled growth of high-quality graphene on a large scale is of central importance for applications in electronics and optoelectronics. To minimize the adverse impacts of grain boundaries in large-area polycrystalline graphene, the synthesis of large single crystals of monolayer graphene is one of the key challenges for graphene production. Here, we develop a facile surface-engineering method to grow large single-crystalline monolayer graphene by the passivation of the active sites and the control of graphene nucleation on copper surface using the melamine pretreatment. Centimeter-sized hexagonal single-crystal graphene domains were successfully grown, which exhibit ultrahigh carrier mobilities exceeding 25 000 cm2 V–1 s–1 and quantum Hall effects on SiO2 substrates. The underlying mechanism of melamine pretreatments were systematically investigated through elemental analyses of copper surface in the growth process of large single-crystals. This present work provides a surface design of a catalytic substrate for the controlled growth of large-area graphene single crystals.
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