Electrical Parameters Degradations and Optimizations of SOI-LIGBT Under Repetitive Unclamped-Inductive-Switching Conditions

The electrical parameters degradations for the lateral insulated gate bipolar transistor on a silicon-on-insulator substrate (SOI-LIGBT) under repetitive unclamped inductive switching (UIS) conditions have been experimentally investigated using the pulsing anode (also called the collector) inrush current stress. The main degradation mechanism is identified to be hot holes injection and trapping into the field oxide under the polygate terminal. In this way, though the monitored threshold voltage (V _th ) shift is not obvious, the ON-state linear anode current (I _alin ) is increased with stressing time due to the induced mirror carriers, and the OFF-state breakdown voltage is largely decreased because of the increase in the peak electrical field in the SOI layer. Thereby, the parameters degradations induced by repetitive UIS conditions must be taken into consideration during SOI-LIGBT design and lifetime evaluation. Finally, a novel SOI-LIGBT structure with double high-voltage wells has been presented to optimize the degradations.