Zr-Doped In2O3 Film for the Interlayer of Perovskite/Crystalline Silicon Tandem Solar Cells

The potential of Zr-doped In2O3 (IZrO) as a transparent conductive oxide film for the interlayer in perovskite/Si tandem solar cells, one of the structure expected to exceed the theoretical conversion efficiency of crystalline Si solar cells, is investigated. From optical simulations, the optimal film thickness for the intermediate layer was calculated to be 20 nm. The fabricated IZrO successfully achieved a transmittance over 95% and a carrier mobility over 20 cm2/Vs. Furthermore, the formation of oxygen vacancies in IZrO by annealing was suppressed with Zr doping.