Lv1
34 积分 2024-11-15 加入
AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing
7小时前
已完结
The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
1个月前
已完结
Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog $\hbox{SrTiO}_{3}$ Metal–Insulator–Metal Capacitors
1个月前
已完结
Recent advances in AlGaN-based LEDs for deep-ultraviolet communications: from device optimization to system performance
1个月前
已完结
Native point defects in GaSb
1个月前
已完结
Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure
1个月前
已完结
A passivation study for AlInAsSb avalanche photodiodes
1个月前
已完结
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
1个月前
已完结
Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications
1个月前
已完结
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
1个月前
已完结
皖公网安备34019202002308
