Recent Applications of Focused Ion Beam–Scanning Electron Microscopy in Advanced Packaging

Advanced packaging represents a crucial technological evolution aimed at overcoming limitations posed by Moore’s Law, driving the semiconductor industry from two-dimensional toward three-dimensional integrated structures. The increasing complexity and miniaturization of electronic devices have significantly heightened the challenges associated with failure analysis during process development. The focused ion beam–scanning electron microscope (FIB-SEM), characterized by its high processing precision and exceptional imaging resolution, has emerged as a powerful solution for the fabrication, defect localization, and failure analysis of micro- and nano-scale devices. This paper systematically reviews the innovative applications of FIB-SEM in the research of core issues, such as through-silicon-via (TSV) defects, bond interfacial failures, and redistribution layer (RDL) electromigration. Additionally, the paper discusses multimodal integration strategies combining FIB-SEM with advanced analytical techniques, such as high-resolution three-dimensional X-ray microscopy (XRM), electron backscatter diffraction (EBSD), and spectroscopy. Finally, it provides a perspective on the emerging applications and potential of frontier technologies, such as femtosecond-laser-assisted FIB, in the field of advanced packaging analysis.