材料科学
量子点
纳米线
纳米技术
超短脉冲
光电探测器
光电子学
载流子
激子
激光器
物理
量子力学
光学
作者
Utkarsh Kumar,Deng Zu-Yin,B. C. Yadav,Min Won Lee,Chiu‐Hsien Wu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2025-03-20
卷期号:36 (18): 182001-182001
被引量:3
标识
DOI:10.1088/1361-6528/adc310
摘要
Abstract Zero-dimensional quantum dots (QDs) and their hybrid structures having been rapidly developed are reshaping the design and performance of next generation ultrafast electronic and optoelectronic devices. The high-performance metrics achievable in photodetectors, solar cells, transistors, and other application areas can be realized through the use of QDs with their tunable electronic and optical properties. Recent advances in the synthesis of QD hybrid structures, where QDs are incorporated within other nanostructure dimensions (1D nanowires, 2D materials), have dramatically increased charge carrier mobility, lowered recombination rates, and resulted in highly controlled interfacial properties. Synergistic effects between these hybrid configurations are exploited, including improved charge separation and enhanced exciton dissociation, which are very important for having ultrafast response times and greater sensitivity. Advanced fabrication techniques such as chemical vapor deposition and solution based self-assembly, QD hybrids can be fabricated with highly controlled interfaces and optimal energy band alignments. Further, computational simulations such as density functional theory (DFT) and time dependent DFT have provided further insights into the charge dynamics and electronic interactions in these hybrid systems for guidance on their design and application. The potential of QD-based hybrid architectures in addressing future information processing demands is demonstrated in this work, setting the stage for the development of high-speed, low-power devices in communications, sensing, and renewable energy technologies.
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