凝聚态物理
分子束外延
材料科学
外延
蜂巢
基质(水族馆)
磁场
磁铁
纳米技术
图层(电子)
物理
复合材料
量子力学
海洋学
地质学
作者
Huimin Zhang,M. Weinert,Lian Li
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-03-13
卷期号:23 (6): 2397-2404
被引量:13
标识
DOI:10.1021/acs.nanolett.3c00345
摘要
Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudomagnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn2 honeycomb (stanene) and Fe3Sn kagome layers, on SrTiO3(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for a film thickness below 10 nm, resulting in differential conductance peaks consistent with Landau levels generated by a pseudomagnetic field greater than 1000 T. Our findings demonstrate the feasibility of strain engineering the electronic properties of topological magnets at the nanoscale.
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