材料科学
钙钛矿(结构)
结晶
薄膜
蒸发
制作
化学工程
基质(水族馆)
能量转换效率
沉积(地质)
卤化物
纳米技术
热稳定性
表面能
光电子学
热的
磁滞
溅射沉积
降水
溅射
成核
光伏
晶体生长
作者
Zitong Wang,Dongxu He,Julian A. Steele,Hongzhe Xu,Bowei Zhang,Huiyuan Cheng,EQ Han,Shanshan Ding,Chengxi Zhang,Miaoqiang Lyu,Lianzhou Wang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-12-17
卷期号:20 (1): 1159-1169
标识
DOI:10.1021/acsnano.5c16992
摘要
Thermal evaporation provides a solvent-free and scalable process for thin-film deposition with high reproducibility, which is particularly attractive for fabricating oxygen- and solvent-sensitive tin-based halide perovskites. However, fully thermally evaporated FASnI3 perovskites have been well underexplored, and the film quality is hindered by uncontrolled crystallization and high defect density. Herein, we develop a sequential thermal evaporation strategy, in which the different growth modes of SnI2 and FAI thin films on the substrate are precisely regulated to guide perovskite crystallization for improving film quality. We found that the FASnI3 film follows a Frank–van der Merwe growth mode owing to the lower surface free energy of the first evaporated SnI2 underlayer, which further promotes the formation of high-quality perovskite thin films with a preferred out-of-plane orientation, homogeneous Sn distribution, and suppressed interfacial defects. Benefiting from the SnI2 underlayer, the FASnI3-based PSCs achieve a champion power conversion efficiency (PCE) of 5.51%. The unencapsulated devices exhibit negligible current–voltage hysteresis and impressive stability, retaining over 91.98% of the initial PCE after 2100 h in a nitrogen atmosphere. These findings provide valuable insights into the scalable fabrication of high-quality and stable lead-free perovskite thin films for high-performance optoelectronics.
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