功率分配器和定向耦合器
消光比
光学
绝缘体上的硅
材料科学
插入损耗
绝热过程
极化(电化学)
硅
光电子学
分路器
波长
物理
热力学
物理化学
化学
作者
Shi Zhao,Jingye Chen,Daoxin Dai A,Yaocheng Shi
出处
期刊:APL photonics
[AIP Publishing]
日期:2023-11-01
卷期号:8 (11)
被引量:13
摘要
A polarization-insensitive thermo-optic switch is proposed and demonstrated on the silicon-on-insulator platform with a 220 nm silicon core layer. The present device is based on the Mach–Zehnder interferometer structure, consisting of polarization-insensitive power splitters and polarization-insensitive phase shifters (PIPSs). The polarization-insensitive power splitter has been realized by employing an adiabatic directional coupler, which utilizes the fast adiabatic mode evolution by introducing cubic Bézier curves on outer contours, providing broadband 3-dB power splitting for TE and TM polarization modes with only 70 µm coupling length. For the novel PIPSs, the ridge waveguide with large aspect ratio, based on the mode hybridness property, could obtain the same power consumption (Pπ) for an optical switch working at TE and TM polarizations. Experimental results indicate that the measured insertion losses are less than 2 dB and the extinction ratios are larger than 15 dB over a 40 nm wavelength band (covering the C-band).
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