稳健性(进化)
可靠性(半导体)
光伏系统
材料科学
异质结
硅
计算机科学
光电子学
晶体硅
热的
可靠性工程
纳米技术
工艺工程
电气工程
化学
工程类
物理
基因
气象学
功率(物理)
量子力学
生物化学
作者
Tristan Gageot,Jordi Veirman,Jean-Sébastien Caron,Mickaël Albaric,Dominique Pelletier,Pedro Jerónimo,Romain Soulas,Sylvain De Vecchi,Wilfried Favre,Lorenzo Carbone,Antonino Ragonesi,C. Gerardi
标识
DOI:10.1016/j.solmat.2023.112395
摘要
Intense illumination treatments on silicon heterojunction cells (SHJ) have recently gained interest to improve the final cell efficiency and are now being implemented into cell manufacturing tools. However, additional efforts are still required to clarify the robustness of such approach. Indeed, it has been reported that the positive effects of the intense illumination treatments applied to cells may be partly lost during module assembly. Therefore, in order to circumvent these potential issues, we reveal herein a broad investigation on the interest of intense illumination treatments directly at module level, using an experimental lab tool provided by Applied Materials, Baccini (Italy). Efficiency gains up to +0.3 %abs have been achieved within a treatment process time compatible with industry requirements. The gains remained stable for two months after a slight decrease during the first days (−0.05 %abs). Moreover, the reliability tests against UV, thermal cycling and damp heat did not reveal any detrimental influence of the post-treatments applied to the modules, further highlighting the fast illumination post-treatment as promising candidate for the next generation of high technologically advanced photovoltaic modules manufacturing production lines.
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