Modulation of bulk and surface electronic structures for oxygen evolution by Cr, P co-doped Co3S4

Co₃S₄ was doped by Cr in the bulk phase and P on the surface to achieve a low overpotential of 257 mV and a long-term durability over 48 h during the oxygen evolution reaction. This was caused by high-valence metal Cr and non-metal P atom doping enhanced conductivity and optimized adsorption energy of intermediates.