纳米线
砷化铟
光电探测器
材料科学
光电子学
异质结
钝化
红外线的
探测器
铟
兴奋剂
纳米技术
砷化镓
计算机科学
电信
光学
图层(电子)
物理
作者
Haonan Chen,Jingzhen Li,Shengzhu Cao,Wenjie Deng,Yongzhe Zhang
标识
DOI:10.1016/j.infrared.2023.104785
摘要
This review summarizes the operational principles of Indium Arsenide (InAs) nanowire photodetectors under different light conditions and the various approaches designed to optimize their performance. InAs nanowires are highly regarded as potential candidates for the next generation of optoelectronic devices, attributed to their exceptional optical and electrical characteristics. However, the surface states and defects of InAs nanowires lead to complex photoresponse mechanisms under different illumination conditions and greatly affect their performance. Therefore, various approaches have been proposed to enhance their performance, including surface passivation, doping, and construction of heterojunctions, etc. This review categorizes these different techniques, discusses their respective advantages and limitations, and provides an outlook on future developments in this field.
科研通智能强力驱动
Strongly Powered by AbleSci AI