物理
凝聚态物理
不对称
磁化
拓扑(电路)
Chern类
量子霍尔效应
极化(电化学)
量子反常霍尔效应
带隙
量子自旋霍尔效应
单层
拓扑序
量子
可见的
自旋(空气动力学)
拓扑简并
格子(音乐)
自旋极化
极地的
自旋电子学
电子能带结构
量子力学
量子涨落
物理中的拓扑熵
Valleytronics公司
Berry连接和曲率
圆极化
退化(生物学)
自旋结构
拓扑绝缘体
拓扑量子数
量子纠缠
作者
Wenzhe Zhou,Lu Liu,Guibo Zheng,Yating Li,Aolin Li,Fangping Ouyang
摘要
Kagome materials exhibit unique electronic properties, such as the quantum anomalous Hall effect. The control of Chern numbers is critical for quantum device manipulation, but existing research has mainly focused on collinear magnetization while neglecting chiral spin textures. Through first-principles calculations and tight-binding modeling of monolayer Cr3Se4, this study reveals spin-chirality-dependent control of topological gaps, Chern numbers, and valley polarization in kagome materials. The results demonstrate that the azimuthal angle has no observable effect. For collinear magnetization (κ = 0) or spin-chirality κ = −1, the topological bandgap decreases as the spin orientation approaches the in-plane direction. Conversely, increasing the polar angle enhances the bandgap for κ = 1. In the breathing kagome lattice, the degeneracy between K and Kʹ valleys is lifted. As the gap undergoes sequential closure and reopening in the two valleys, the structural asymmetry and spin-chirality allow for controlled tuning of the topological gap, Chern number, and valley polarization. Moreover, the emergence of a topological Hall effect is also demonstrated. These findings provide strategies for controlling topological states and advancing applications in quantum devices and valleytronic systems.
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